INTERNATIONAL BURCH UNIVERSITY
Faculty of Engineering and Natural Sciences
Department of Electrical and Electronic Engineering
2016-2017

SYLLABUS
Code Name Level Year Semester
EEE 205 Semiconductor Devices and Modeling Undergraduate 2 Fall
Status Number of ECTS Credits Class Hours Per Week Total Hours Per Semester Language
Compulsory 5 2 + 2 125 English

Instructor Assistant Coordinator
Jasmin Kevrić, Assist. Prof. Dr. Jasmin Kevric Jasmin Kevrić, Assist. Prof. Dr.
[email protected] [email protected] no email

This course provides a solid foundation in the physical aspects of semiconductor models so that students will be able to not only understand current devices and exploit them in novel applications, but also appreciate the workings of new semiconductor devices as they materialize and evolve in future years. The material is presented rigorously. The course covers Semiconductor Diode and Bipolar Junction Transistor and its applications.

COURSE OBJECTIVE
The main object is to understand the application of the semiconducting materials; and to gain more information about techniques of their preparations and measurements and interpretation of the results.

COURSE CONTENT
Week
Topic
  1. Semiconductor Diode
  2. Semiconductor Diode
  3. Semiconductor Diode
  4. Semiconductor Diode
  5. Diode Characteristics
  6. Diode Characteristics
  7. Midterm Review
  8. M I D T E R M E X A M
  9. Post Midterm Review
  10. Diode Characteristics
  11. Diode Characteristics
  12. Transistor
  13. Transistor
  14. Transistor
  15. Final Review

LABORATORY/PRACTICE PLAN
Week
Topic

    TEACHING/ASSESSMENT
    Description
    • Interactive Lectures
    • Practical Sessions
    • Excersises
    • Problem solving
    • Assignments
    Description (%)
    Method Quantity Percentage (%)
    Quiz1010
    Midterm Exam(s)130
    Laboratory515
    Attendance15
    Final Exam140
    Total: 100
    Learning outcomes
    • Explain and apply the semiconductor concepts of drift, diffusion, donors and acceptors, majority and minority carriers, excess carriers, low level injection, minority carrier lifetime, quasi-neutrality, and quasi-statics;
    • Explain the underlying physics and principles of operation of p-n junction diodes, bipolar junction transistors (BJTs), and describe and apply simple large signal circuit models for these devices which include charge storage elements;
    • Explain how devices and integrated circuits are fabricated and describe discuss modern trends in the microelectronics industry;
    • Explain, compare, and contrast the input, output, and gain characteristics of single-transistor
    • Determine the frequency range of simple electronic circuits and understand the high frequency limitations of BJTs
    • Understand the limitations of the various device models, identify the appropriate model for a given problem or situation, and justify the selection; and
    • Design simple devices and circuits to meet stated operating specifications.
    TEXTBOOK(S)
    • Robert L. Boylestad and Louis Nashelsky, “Electronic Devices and Circuit Theory,” 11th Edition, Pearson

    ECTS (Allocated based on student) WORKLOAD
    Activities Quantity Duration (Hour) Total Work Load
    Lecture (14 weeks x Lecture hours per week)14228
    Laboratory / Practice (14 weeks x Laboratory/Practice hours per week)14228
    Midterm Examination (1 week)122
    Final Examination(1 week)122
    Preparation for Midterm Examination11515
    Preparation for Final Examination12525
    Assignment / Homework/ Project5525
    Seminar / Presentation 0
    Total Workload: 125
    ECTS Credit (Total workload/25): 5